參數(shù)資料
型號(hào): 2SB1260G-Q-TN3-R
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 功率晶體管
英文描述: 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252
封裝: HALOGEN FREE PACKAGE-3
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 230K
代理商: 2SB1260G-Q-TN3-R
2SB1260
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R208-017,E
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
-80
V
Collector -Emitter Voltage
VCEO
-80
V
Emitter -Base Voltage
VEBO
-5
V
Peak Collector Current (single pulse, Pw=100ms)
ICM
-2
A
DC Collector Current
IC
-1
A
SOT-89
0.5
W
Power Dissipation
TO-252
PD
1.9
W
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-40 ~ +150
Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm
2 or larger.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Base Breakdown Voltage
BVCBO
IC= -50μA
-80
V
Collector Emitter Breakdown Voltage
BVCEO
IC= -1mA
-80
V
Emitter Base Breakdown Voltage
BVEBO
IE= -50μA
-5
V
Collector Cut-Off Current
ICBO
VCB=-60V
-1
μA
Emitter Cut-Off Current
IEBO
VEB=-4V
-1
μA
DC Current Gain(Note 1)
hFE
VCE=-3V, IOUT=-0.1A
82
390
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-500mA, IB=-50mA
-0.4
V
Transition Frequency
fT
VCE= -5V, IE=50mA, f=30MHz
100
MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
25
pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82 ~ 180
120 ~ 270
180 ~ 390
相關(guān)PDF資料
PDF描述
2SB1260G-P-TN3-R 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252
2SB1260G-R-TN3-R 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252
2SB1260T100Q 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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