- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30504 > 2SB1271R 7 A, 80 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SB1271R |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-220MF, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SB1271R |
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2004. Specifications and information herein are subject
to change without notice.
2SB1271/2SD1907
PS No.2267–4/4
0
20
40
60
80
100
120
140
160
0
0.4
1.2
1.6
1.65
2.0
0.8
PC -- Ta
ITR09531
N
o heat
sink
0
20
40
60
80
100
120
140 150 160
0
10
20
30
40
50
PC -- Ta
ITR09532
ITR09529
A S O
10ms
1ms
DC
operation
100ms
ICP=–12A
IC=–7A
--1.0
7
--10
57
23
--100
57
23
--0.1
--1.0
2
5
3
7
2
5
7
5
3
--10
12
Ideal
radiation
ITR09530
A S O
10ms
1ms
DC
operation
100ms
ICP=12A
IC=7A
1.0
7
10
57
23
100
57
22
3
0.1
1.0
2
5
3
7
2
5
7
5
3
10
2SB1271
2SD1907
2SB1271 / 2SD1907
80
12
80
1ms to 100ms : single pulse
Collector-to-Emitter Voltage, VCE – V
Collector
Current,
I C
–
A
Collector-to-Emitter Voltage, VCE – V
Collector
Current,
I C
–
A
Collector
Dissipation,
P
C
–
W
Ambient Temperature, Ta –C
Collector
Dissipation,
P
C
–
W
Ambient Temperature, Ta –C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1907-Q | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SB1271Q | 7 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SD1907-S | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1907S | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1907R | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1274 | 制造商:n/a 功能描述:2SB1274 N9H1D |
| 2SB1274R | 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1274S | 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1275TLP | 功能描述:兩極晶體管 - BJT PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1278 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR FTL -80V -.7A .75W ECB |
發(fā)布緊急采購，3分鐘左右您將得到回復。