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參數(shù)資料
| 型號： | 2SB1375 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | 2-10R1A, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 138K |
| 代理商： | 2SB1375 |
2SB1375
2004-07-26
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1375
Audio Frequency Power Amplifier
Low saturation voltage: VCE (sat) = 1.5 V (max)
(IC = 2 A, IB = 0.2 A)
High power dissipation: PC = 25 W (Tc = 25°C)
Collector metal (fin) is covered with mold resin
Complementary to 2SD2012
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
3
A
Base current
IB
0.5
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
―
10
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
10
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
60
―
V
hFE (1)
VCE = 5 V, IC = 0.5 A
100
―
320
DC current gain
hFE (2)
VCE = 5 V, IC = 2 A
15
―
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.2 A
―
1.0
1.5
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 0.5 A
―
0.75
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 0.5 A
―
9
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
50
―
pF
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB1378S | 500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1378Q | 500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1388 | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SD2093 | 10 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SB1389 | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1375(F) | 制造商:Toshiba 功能描述:PNP -60V -3A 100 to 320 TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 60V 3A TO220NIS 制造商:Toshiba 功能描述:Trans GP BJT PNP 60V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SB1375,CLARIONF(M | 功能描述:TRANS PNP 3A 60V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態(tài):停產 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 200mA，2A 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:100 @ 500mA，5V 功率 - 最大值:2W 頻率 - 躍遷:9MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商器件封裝:TO-220NIS 標準包裝:1 |
| 2SB1378 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1381(Q) | 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SB1382 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP DARL 120V 16A TO3PF |
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