參數(shù)資料
型號： 2SB1386-R-TP
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號晶體管
英文描述： 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, PLASTIC, PACKAGE-3
文件頁數(shù)： 1/4頁
文件大?。?/td> 371K
代理商： 2SB1386-R-TP
2SB1386-P
PNP Silicon
Epitaxial Transistors
Features
Low Collector Saturation Voltage
Execllent current-to-gain characteristics
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-20
V
VCBO
Collector-Base Voltage
-30
V
VEBO
Emitter-Base Voltage
-6.0
V
IC
Collector Current
-2.0
A
PC
Collector power dissipation
0.5
W
TJ
Junction Temperature
150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25
Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CBO
Collector-base Breakdown Voltage
(IC=-50uAdc, IE=0)
-30
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=-20Vdc,IE=0)
---
-0.5
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=-5Vdc, IC=0)
---
-0.5
uAdc
hFE(1)
DC Current Gain
(IC=-0.5Adc, VCE=-2.0Vdc)
82
---
390
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-4Adc, IB=-0.1Adc)
---
-1.0
Vdc
fT
Transition Frequency
(VCE=-6Vdc, IC=-50mAdc,f=30MHz)
120
---
MHz
Cob
Collector output capacitance
(VCB=-20Vdc, IE=0,f=1.0MHz)
---
60
---
pF
Revision: A
2011/01/01
omponents
20736 Marilla
Street Chatsworth
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MCC
SOT-89
1. Emitter
2. Collector
3. Base
TM
Micro Commercial Components
CLASSIFICATION OF HFE(1)
Rank
P
Q
R
Range
82-180
Marking
BHP
120-270
180-390
BHQ
BHR
www.mccsemi.com
1 of
4
2SB1386-Q
2SB1386-R
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
-20
---
Vdc
V(BR)EBO
Emitter-base Breakdown Voltage
(IE=-50uAdc, IC=0)
-6
---
Vdc
B
A
E
D
G
H
F
K
J
C
1
2
3