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| 型號： | 2SB1394 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PCP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SB1394 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Compact Motor Driver Applications
Ordering number:ENN3174B
2SB1394/2SD2099
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41504TN (PC)/O1598HA (KT)/41694TH (KOTO) 8-4826/7149MO, TS No.3174–1/4
4.5
1.6
0.5
0.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3
2
1
Package Dimensions
unit:mm
2038A
[2SB1394/2SD2099]
Features
Contains input resistance (R1), base-to-emitter
resistance (RBE).
Contains diode between collector and emitter.
Low saturation voltage.
Large current capacity.
Small-sized package making it easy to provide high-
density, small-sized hybrid ICs.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
( ) : 2SB1394
Specifications
Absolute Maximum Ratings at Ta = 25C
Marking : 2SB1394 : BN
Continued on next page.
2SD2099 : DL
Mounted on ceramic board (250mm
2×0.8mm)
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相關(guān)PDF資料 |
PDF描述 |
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| 2SB1396-S | 3 A, 10 V, PNP, Si, POWER TRANSISTOR |
| 2SB1396-T | 3 A, 10 V, PNP, Si, POWER TRANSISTOR |
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| 2SB1396 | 3 A, 10 V, PNP, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1396S-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 10V 3A SOT89 |
| 2SB1398 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB13980PA | 功能描述:TRANS PNP LF AMP 25VCEO MT-2 RoHS:否 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB13980QA | 功能描述:TRANS PNP LF AMP 25VCEO MT-2 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1398QTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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