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參數(shù)資料
| 型號(hào)： | 2SB1473R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MT2, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 168K |
| 代理商： | 2SB1473R |
1
Transistor
2SB1473
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to2SD2225
s Features
q
High collector to emitter voltage VCEO.
q
Satisfactory linearity of forward current transfer ratio hFE.
q
High transition frequency fT.
q
Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±0.1
4.5
±0.1
14.5
±0.5
2.5
±0.5 2.5±0.5
2.5
±0.1
6.9
±0.1
1.05
±0.05
(1.45)
4.0
0.7
0.8
0.15
0.5
0.2
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1
–0.05
3
2
1
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
–120
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
A
W
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
VCEO
VEBO
hFE1
*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = –0.1mA, IB = 0
IE = –10A, IC = 0
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
*2
IC = –300mA, IB = –30mA
*2
IC = –300mA, IB = –30mA
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–120
–5
90
50
typ
250
max
330
–1.0
–1.2
30
Unit
V
MHz
pF
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
*1h
FE1 Rank classification
Rank
Q
R
S
hFE1
90 ~ 155
130 ~ 220
185 ~ 330
*2 Pulse measurement
1.2
±0.1
0.65
max.
0.45 0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1474TL | 功能描述:達(dá)林頓晶體管 DARL PNP 80V 4A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SB1481(Q) | 制造商:Toshiba 功能描述:PNP -100V -4A 2000 TO220NIS 制造商:Toshiba 功能描述:PNP -100V -4A 2000 TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, D |
| 2SB1481(TOJS,Q,M) | 功能描述:TRANS PNP 4A 100V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態(tài):停產(chǎn) 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:4A 電壓 - 集射極擊穿（最大值）:100V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:1.5V @ 6mA，3A 電流 - 集電極截止（最大值）:2μA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:2000 @ 3A，2V 功率 - 最大值:2W 頻率 - 躍遷:- 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商器件封裝:TO-220NIS 標(biāo)準(zhǔn)包裝:1 |
| 2SB14880PA | 功能描述:TRANS PNP 400VCEO 500MA MT-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1495(Q) | 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, D |
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