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參數(shù)資料
| 型號(hào)： | 2SB1553 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MT4, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2SB1553 |
1
Power Transistors
2SB1553
Silicon PNP epitaxial planar type
For power amplification
I
Features
G
High foward current transfer ratio h
FE
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Allowing automatic insertion with radial taping
I
Absolute Maximum Ratings
(T
C
=25C)
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= –60V, I
E
= 0
V
CE
= –40V, I
B
= 0
V
EB
= –6V, I
C
= 0
I
C
= –25mA, I
B
= 0
V
CE
= –4V, I
C
= – 0.5A
I
C
= –2A, I
B
= – 0.05A
V
CE
= –12V, I
C
= – 0.2A, f = 10MHz
min
–60
300
typ
30
max
–100
–100
–100
700
–1
Unit
μ
A
μ
A
μ
A
V
V
MHz
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
±
0.2
0.55
±
0.1
2.5
±
0.2
2.5
±
0.2
4
±
0
1
±
0
2
±
0
1
±
0
S
5.0
±
0.1
2.25
±
0.2
1.2
±
0.1
0.65
±
0.1
1.05
±
0.1
0.55
±
0.1
C1.0
90
°
C1.0
1
2
3
0.35
±
0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
–60
–60
–6
–6
–3
–1
15
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
*
h
FE
Rank classification
Rank
Q
P
h
FE
300 to 500
400 to 700
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