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參數(shù)資料
| 型號(hào)： | 2SB1553P |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MT4, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 192K |
| 代理商： | 2SB1553P |
Power Transistors
158
2SB1553
Silicon PNP epitaxial planar type
For power amplification
I Features
High forward current transfer ratio h
FE
Satisfactory linearity of forward current transfer ratio h
FE
Allowing automatic insertion with radial taping
I Absolute Maximum Ratings T
C = 25°C
1 : Base
2 : Collector
3 : Emitter
MT-4-A1 Package
Unit: mm
I Electrical Characteristics T
C = 25°C
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
6V
Peak collector current
ICP
6A
Collector current
IC
3A
Base current
IB
1A
Collector power
TC = 25
°CP
C
15
W
dissipation
Ta = 25
°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
100
A
ICEO
VCE =
40 V, I
B = 0
100
A
Emitter cutoff current
IEBO
VEB =
6 V, I
C = 0
100
A
Collector to emitter voltage
VCEO
IC = 25 mA, IB = 0
60
V
Forward current transfer ratio *
hFE
VCE =
4 V, I
C =
0.5 A
300
700
Collector to emitter saturation voltage
VCE(sat)
IC =
2 A, I
B =
0.05 A
1V
Transition frequency
fT
VCE = 12 V, IC = 0.2 A, f = 10 MHz
30
MHz
Rank
Q
P
hFE
300 to 500
400 to 700
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±0.2
4.2
±0.2
18.0
±0.5
Solder
Dip
5.0±0.1
2.5
±0.1
90
1.0±0.2
Note) *: Rank classification
Ma
int
en
an
ce
/
Dis
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nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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