參數(shù)資料
型號: 2SB1557-A
元件分類: 功率晶體管
英文描述: 7 A, 140 V, PNP, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-16C1A, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 189K
代理商: 2SB1557-A
1998
Document No. D16144EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA1871
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1871 is a transistor developed for high-speed high-
voltage switching and is ideal for use in switching elements such
as switching regulators and DC/DC converters.
FEATURES
New package with dimensions in between those of small signal
and power signal package
High voltage
Fast switching speed
Complementary transistor with 2SC4942
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
600
V
Collector to emitter voltage
VCEO
600
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms, duty cycle ≤ 50 %
2.0
A
Total power dissipation
PT
7.5 cm
2
× 0.7 mm ceramic board used
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Electrode connection
1: Emitter
2: Collector
3: Base
相關(guān)PDF資料
PDF描述
2SB1557-B 7 A, 140 V, PNP, Si, POWER TRANSISTOR
2SB1558-C 8 A, 140 V, PNP, Si, POWER TRANSISTOR
2SB1567 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220FN
2SB1571-AZ 5 A, 30 V, PNP, Si, POWER TRANSISTOR
2SB1571-HX 5 A, 30 V, PNP, Si, POWER TRANSISTOR
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