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參數(shù)資料
| 型號(hào)： | 2SB1603AP |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-220E, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SB1603AP |
1
Power Transistors
2SB1603, 2SB1603A
Silicon PNP epitaxial planar type
For low-voltage switching
s Features
q
Low collector to emitter saturation voltage VCE(sat)
q
High-speed switching
q
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–40
–50
–20
–40
–5
–8
–4
25
2
150
–55 to +150
2SB1603
2SB1603A
2SB1603
2SB1603A
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±0.3
23
1
4.6
±0.2
2.9
±0.2
2.6
±0.1
2.54
±0.2
0.75
±0.1
1.2
±0.15
5.08
±0.4
15.0
±0.3
13.7
+0.5
–0.2
φ3.2±0.1
3.0
±0.2
8.0
±0.2
4.1
±0.2
Solder
Dip
1.45
±0.15
0.7
±0.1
7
°
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –40V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –1A
IC = –2A, IB = – 0.1A
VCE = –5V, IC = – 0.5A, f = 10MHz
IC = –2A, IB1 = – 0.2A, IB2 = 0.2A
min
–20
–40
45
90
typ
150
0.3
0.4
0.1
max
–50
260
– 0.5
–1.5
Unit
A
V
MHz
s
2SB1603
2SB1603A
*h
FE2 Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
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