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參數(shù)資料
| 型號： | 2SB1604Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220E, FULL PACK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 173K |
| 代理商： | 2SB1604Q |
2
Power Transistors
2SB1604, 2SB1604A
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
0
–12
–10
–8
–2
–6
–4
0
–12
–10
–8
–6
–4
–2
T
C=25C
–80mA
–60mA
–50mA
–40mA
–35mA
–20mA
–15mA
–30mA
–25mA
–10mA
–5mA
I
B=–100mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
– 0.1
–1
–10
– 0.3
–3
– 0.01
–10
–1
– 0.1
– 0.03
– 0.3
–3
I
C/IB=30
T
C=–25C
25C
100C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
– 0.1
–1
–10
–100
– 0.3
–3
–30
1
3
10
30
100
300
1000
3000
10000
V
CE=–2V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
– 0.1
–1
–10
–100
– 0.3
–3
–30
1
3
10
30
100
300
1000
3000
10000
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
0–8
–2
–6
–4
–7
–1
–5
–3
0.01
10
1
0.1
0.03
0.3
3
t
stg
t
on
t
f
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=30
(–I
B1=IB2)
V
CC=–20V
T
C=25C
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
– 0.1
–1
–10
– 0.3
–3
– 0.01
–10
–1
– 0.1
– 0.03
– 0.3
–3
I
C/IB=30
T
C=100C
–25C
25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–10V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
– 0.1
–1
–10
–100
– 0.3
–3
–30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
CP
I
C
10ms
t=1ms
2SB1604A
2SB1604
Non repetitive pulse
T
C=25C
DC
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
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