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參數(shù)資料
| 型號： | 2SB1605A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For low-freauency power amplification) |
| 中文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-220E, FULL PACK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 45K |
| 代理商： | 2SB1605A |
1
Power Transistors
2SB1605, 2SB1605A
Silicon PNP epitaxial planar type
For low-freauency power amplification
I
Features
G
High forward current transfer ratio h
FE
which has satisfactory linearity
G
Low collector to emitter saturation voltage V
CE(sat)
G
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–80
–60
–80
–5
–5
–3
35
2
150
–55 to +150
2SB1605
2SB1605A
2SB1605
2SB1605A
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±
0.3
2
3
1
4.6
±
0.2
2.9
±
0.2
2.6
±
0.1
2.54
±
0.2
5.08
±
0.4
0.75
±
0.1
1.2
±
0.15
1.45
±
0.15
1
±
0
1
+
–
φ
3.2
±
0.1
3
±
0
8
±
0
4
±
0
S
0.7
±
0.1
7
°
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
I
C
= –3A, I
B
= – 0.375A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
I
C
= –1A, I
B1
= – 0.1A, I
B2
= 0.1A
min
–60
–80
70
10
typ
30
0.5
1.2
0.3
max
–200
–200
–300
–300
–1
250
–1.8
–1.2
Unit
μ
A
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SB1605
2SB1605A
2SB1605
2SB1605A
2SB1605
2SB1605A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
70 to 150
120 to 250
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