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參數(shù)資料
| 型號： | 2SB1732TL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TUMT3, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2SB1732TL |
2SB1732
Transistors
Rev.B
2/2
Electrical characteristic curves
Fig.1 DC current gain vs.
collector current
0.001
0.01
0.1
10
100
1000
110
PULSED
VCE
=2V
COLLECTOR CURRENT : IC (
A)
DC
CURRENT
GAIN
:
h
FE
Ta
=100°C
25
°C
40°C
Fig.2 Collector-emitter saturation voltage
vs.collector current
Fig.3 Base-emitter saturation voltage
vs.collector current
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (
A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
PULSED
IC/IB
=20
Ta
=100°C
25
°C
40°C
Ta
=40°C
25
°C
100
°C
Fig.4 Collector-emitter saturation
voltage vs. collector current
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
IC/IB
=50
20
10
COLLECTOR CURRENT : IC (
A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
PULSED
Ta
=25°C
Fig.5 Grounded emitter propagation
characteristics
0
0.5
1
0.001
0.1
1
0.01
10
1.5
PULSED
VCE
=2V
BASE TO EMITTER VOLTAGE : VBE (V
)
COLLECTOR
CURRENT
:
I
C
(A)
Ta
=100°C
25
°C
40°C
Fig.6 Gain bandwidth product
vs. emitter current
0.001
0.01
0.1
10
100
1000
110
Ta
=25°C
VCE
=2V
f
=100MHz
EMITTER CURRENT : IE (
A)
TRANSITION
FREQUENCY
:
f
T
(MHz)
Fig.7 Collector output capacitance
vs. collector-base voltage
0.1
1
10
100
10
100
Ta
=25°C
IE
=0mA
f
=1MHz
COLLECTOR TO BASE VOLTAGE : VCB (V
)
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
Emitter input capacitance
vs. emitter-base voltage
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1733TL | 功能描述:兩極晶體管 - BJT 30V 1A PNP LOW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB176 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB187 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -25V -.15A .2W |
| 2SB206 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:GE PNP POWER BJT |
| 2SB2107 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Bipolar Transistors |
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