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參數(shù)資料
| 型號： | 2SB549 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 中文描述： | 進步黨/ NPN硅外延晶體管低頻功放 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 134K |
| 代理商： | 2SB549 |
Data Sheet D16141EJ2V0DS
2
2SB548, 549/2SD414, 415
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
Note
T
T
Temperature T (
°
C)
Note
1.
2.
Tc = 25
°
C
Derate the dissipation limited
area by case temperature and
duty cycle.
S/b limited area is a single
pulse. Derate this area by
3.
Collector to Emitter Voltage V
CE
(V)
Case Temperature Tc (
°
C)
D
T
R
t
°
C
Collector to Emitter Voltage V
CE
(V)
Pulse Width PW (ms)
Collector to Emitter Voltage V
CE
(V)
1.
2.
Tc = 25
C
Derate the dissipation limited
area by case temperature and
duty cycle.
S/b limited area is a single
pulse. Derate this area by case
temperature.
3.
C
C
C
C
C
C
Note
1. 1 mm aluminum board
for heatsink
2. No insulating board
3. Silicon grease coating
4. Horizontal level
With infinite heatsink
Without te heatsink
Note
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD414 | PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 2SD415 | PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 2SB548 | Audio Frequency Power Amplifier |
| 2SB549 | Audio Frequency Power Amplifier |
| 2SD414 | Audio Frequency Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB549Q | 制造商:NEC Electronics Corporation 功能描述:Bipolar Junction Transistor, PNP Type, TO-126VAR |
| 2SB550 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB551 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
| 2SB552 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 15A I(C) | TO-3 |
| 2SB553 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-220AB |
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