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參數(shù)資料
| 型號(hào)： | 2SB562CTZ-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 157K |
| 代理商： | 2SB562CTZ-E |
2SB562
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–25
—
V
IC = –10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–20
—
V
IC = –1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
–5
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–1.0
A
VCB = –20 V, IE = 0
DC current transfer ratio
hFE*
1
85
—
240
VCE = –2 V,
IC = –0.5 A (Pulse test)
Collector to emitter saturation voltage
VCE(sat)
—
–0.2
–0.5
V
IC = –0.8 A,
IB = –0.08 A (Pulse test)
Base to emitter voltage
VBE
—
–0.8
–1.0
V
VCE = –2 V,
IC = –0.5 A (Pulse test)
Gain bandwidth product
fT
—
350
—
MHz
VCE = –2 V,
IC = –0.5 A (Pulse test)
Collector output capacitance
Cob
—
38
—
pF
VCB = –10 V, IE = 0
f = 1 MHz
Note:
1. The 2SB562 is grouped by hFE as follows.
B
C
85 to 170
120 to 240
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB562BTZ-E | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB562CTZ-E | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB566(K)C | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB566A(K)B | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB566A(K)C | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB563 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB564 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR SP-8 -30V -1A 1W ECB 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SB564A | 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
| 2SB564-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB564K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-221VAR |
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