參數(shù)資料
型號(hào): 2SB566A
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Triple Diffused
中文描述: 三重?cái)U(kuò)散硅進(jìn)步黨
文件頁數(shù): 2/6頁
文件大?。?/td> 33K
代理商: 2SB566A
2SB566(K), 2SB566A(K)
2
Electrical Characteristics
(Ta = 25°C)
2SB566(K)
2SB566A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–70
–70
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50
–60
V
I
C
= –50 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
–5
–5
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
–1
–1
μ
A
V
CB
= –50 V, I
E
= 0
V
CE
= –4 V, I
C
= –1 A
V
CE
= –4 V, I
C
= –0.1 A
I
C
= –2 A, I
B
= –0.2 A
DC current tarnsfer ratio h
FE1
*
1
60
200
60
200
h
FE2
V
CE(sat)
35
35
Collector to emitter
saturation voltage
–1.0
–1.0
V
Base to emitter
saturation voltage
V
BE(sat)
–1.2
–1.2
V
I
C
= –2 A, I
B
= –0.2 A
Gain bandwidth product f
T
Turn on time
15
15
MHz
V
CE
= –4 V, I
C
= –0.5 A
V
CC
= –10.5 V
I
C
= 10I
B1
= –10I
B2
=
–0.5 A
t
on
t
off
t
stg
0.3
0.3
μ
s
μ
s
μ
s
Turn off time
3.0
3.0
Storage time
Note:
2.5
2.5
1. The 2SB566(K) and 2SB566A(K) are grouped by h
FE1
as follows.
B
C
60 to 120
100 to 200
相關(guān)PDF資料
PDF描述
2SB566AK Silicon PNP Triple Diffused
2SB566K Silicon PNP Triple Diffused
2SB566 Power Bipolar Transistors
2SB566A Power Bipolar Transistors
2SB632 PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35V,2A低頻功率放大器應(yīng)用的PNP硅外延平面型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB566A(K)B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB
2SB566A(K)C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB
2SB566AB(K) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SB566AC(K) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SB566AK 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Triple Diffused