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參數(shù)資料
| 型號： | 2SB601-M |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 227K |
| 代理商： | 2SB601-M |
Data Sheet D16131EJ3V0DS
2
2SB601
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC =
3 A, IB1 = 3 mA, L = 1 mH
100
V
Collector to emitter voltage
VCEX(SUS)1
IC =
3 A, IB1 = IB2 = 3 mA,
VBE(OFF) = 5.0 V, L = 180
H, clamped
100
V
Collector to emitter voltage
VCEX(SUS)2
IC =
6 A, IB1 = 12 mA, IB2 = 3 mA,
VBE(OFF) = 5.0 V, L = 180
H, clamped
100
V
Collector cutoff current
ICBO
VCB =
100 V, IE = 0
10
A
Collector cutoff current
ICER
VCE =
100 V, RBE = 51 , Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE =
100 V, VBE(OFF) = 1.5 V
10
A
Collector cutoff current
ICEX2
VCE =
100 V, VBE(OFF) = 1.5 V,
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0
3.0
mA
DC current gain
hFE1*
VCE =
2.0 V, IC = 3.0 A
2,000
15,000
DC current gain
hFE2*
VCE =
2.0 V, IC = 5.0 A
500
Collector saturation voltage
VCE(sat)*
IC =
3.0 A, IB = 3.0 mA
1.5
V
Base saturation voltage
VBE(sat)*
IC =
3.0 A, IB = 3.0 mA
2.0
V
Turn-on time
ton
0.5
s
Storage time
tstg
1.0
s
Fall time
tf
IC =
3.0 A, RL = 17 ,
IB1 =
IB2 = 3.0 mA, VCC 50 V
Refer to the test circuit.
1.0
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
h)( CLASSIFICATION
Marking
M
L
K
hFE1
2,000 to 5,000
3,000 to 7,000
5,000 to 15,000
TYPICAL CHARACTERISTICS (Ta = 25
°°°°C)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SB605 | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON TRANSISTOR |
| 2SB605-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB605K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | SPAKVAR |
| 2SB605-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB605L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | SPAKVAR |
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