參數(shù)資料
型號(hào): 2SB647ACTZ-E
元件分類(lèi): 小信號(hào)晶體管
英文描述: 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: SC-51, TO-92 MOD, 3 PIN
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 184K
代理商: 2SB647ACTZ-E
2SB647, 2SB647A
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SB647
2SB647A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–120
–120
V
IC = –10
A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–80
–100
V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
–5
–5
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
–10
–10
A
VCB = –100 V, IE = 0
DC current transfer ratio
hFE1*
1
60
320
60
200
VCE = –5 V,
IC = –150 mA*
2
hFE2
30
30
VCE = –5 V,
IC = –500 mA*
2
Collector to emitter
saturation voltage
VCE(sat)
–1
–1
V
IC = –500 mA,
IB = –50 mA*
2
Base to emitter voltage
VBE
–1.5
–1.5
V
VCE = –5 V,
IC = –150 mA*
2
Gain bandwidth product
fT
140
140
MHz
VCE = –5 V,
IC = –150 mA
Collector output
capacitance
Cob
20
20
pF
VCB = –10 V, IE = 0
f = 1 MHz
Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as follows.
2. Pulse test
B
C
D
2SB647
100 to 200
160 to 320
2SB647A
60 to 120
100 to 200
相關(guān)PDF資料
PDF描述
2SB649 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB649 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB649D 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB649AC 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB649C 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB647B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR
2SB647C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR
2SB647-C 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 80V 1A 3-Pin TO-92 Mod
2SB647CTZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SB647D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR