- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33350 > 2SB647CTZ-E 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號： | 2SB647CTZ-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-51, TO-92 MOD, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 184K |
| 代理商： | 2SB647CTZ-E |
2SB647, 2SB647A
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
Maximum Collector Dissipation Curve
1.2
0.8
0.4
0
50
150
100
Ambient Tmperature Ta (°C)
Collector
power
dissipation
P
C
(W)
Typical Output Characteristics
–1.0
–0.8
–0.6
–0.4
–0.2
0
–2
–10
–6
–4
–8
IB = 0
–0.5mA
–2
–1
–5
–10
–20
–30
–40
–60
–80
–100
–120
Collector
current
I
C
(A)
Collector to Emitter Voltage VCE (V)
P
C
= 0.9
W
Typical Transfer Characteristics
–500
–200
–100
–50
–20
–10
–5
–2
–1
0
–0.2
–0.4
–0.6
–0.8
–1.0
VCE = –5 V
Pulse
Ta
=
75
°C
–25
Base to Emitter Voltage VBE (V)
Collector
current
I
C
(mA)
DC Current Transfer Ratio
vs. Collector Current
VCE = –5 V
Pulse
Ta = 75
°C
600
500
400
300
200
100
0
–1
–3
–30
–300
–10
Collector Current IC (mA)
DC
current
transfer
ratio
h
FE
–100
–1,000
25
–25
Saturation Voltage
vs. Collector Current
Collector Current IC (mA)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V)
IC = 10 IB
Pulse
Ta = –25
°C
75
25
–25
Ta = 75
°C
VCE(sat)
VBE(sat)
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V) –0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
–1
–3
–10
–30
–100 –300 –1,000
Gain Bandwidth Product
vs. Collector Current
VCE = –5 V
240
200
160
120
80
40
0
–10
–30
–100
–300
–1,000
Collector Current IC (mA)
Gain
bandwidth
product
f
T
(MHz)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB647ABTZ-E | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB647ACTZ-E | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB649 | 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB649 | 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB649D | 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB647D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB647DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB648 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
| 2SB648A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SB648AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-126VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。