參數(shù)資料
型號: 2SB649C
元件分類: 小信號晶體管
英文描述: 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: TO-126MOD, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 32K
代理商: 2SB649C
2SB649, 2SB649A
3
Electrical Characteristics (Ta = 25°C)
2SB649
2SB649A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–180 —
–180 —
V
I
C = –1 mA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–120 —
–160 —
V
I
C = –10 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
–5
V
I
E = –1 mA, IC = 0
Collector cutoff current
I
CBO
–10
–10
AV
CB = –160 V, IE = 0
DC current transfer ratio h
FE1*
1
60
320
60
200
V
CE = –5 V,
I
C = –150 mA
h
FE2
30
30
V
CE = –5 V,
I
C = –500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
——–1——–1V
I
C = –500 mA,
I
B = –50 mA
Base to emitter voltage
V
BE
–1.5
–1.5
V
CE = –5 V,
I
C = –150 mA
Gain bandwidth product f
T
140
140
MHz
V
CE = –5 V,
I
C = –150 mA
Collector output
capacitance
Cob
27
27
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SB649 and 2SB649A are grouped by h
FE1 as follows.
2. Pulse test
BC
D
2SB649
60 to 120
100 to 200
160 to 320
2SB649A
60 to 120
100 to 200
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