參數(shù)資料
型號(hào): 2SB649D
元件分類: 小信號(hào)晶體管
英文描述: 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: TO-126MOD, 3 PIN
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 32K
代理商: 2SB649D
2SB649, 2SB649A
5
DC Current Transfer Ratio
vs. Collector Current
350
VCE = –5V
Ta = 75°C
25°C
–25°C
350
250
200
150
DC
current
transfer
ratio
h
FE
100
50
0
–1
–10
–100
–1,000
Collector current IC (mA)
Collector to Emitter Saturation
Voltage vs. Collector Current
IC = 10 IB
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
–10
Collector current IC (mA)
–100
–25
25
–1,000
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V)
Ta
=
75
°C
Collector current IC (mA)
IC = 10 IB
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
–10
–100
–1,000
Base
to
emitter
saturation
voltage
V
BE(sat)
(V)
Base to Emitter Saturation Voltage
vs. Collector Current
Ta =
–25°
C
25
75
VCE = –5 V
Gain Bandwidth Product
vs. Collector Current
240
200
160
120
80
40
0
–10
–30
Gain
bandwidth
product
f
T
(MHz)
–100
–300
–1,000
Collector current IC (mA)
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