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參數(shù)資料
| 型號(hào)： | 2SB688O |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 77K |
| 代理商： | 2SB688O |
UTC 2SB688
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
www.unisonic.com
QW-R214-007,A
HIGH POWER AMPLIFIER APPLICATION
FEATURES
* Complementary to 2SD718.
* Recommended for 45 ~ 50W Audio Frequency Amplifier
Output Stage.
TO-3P
1
1: BASE
2: COLLECTOR
3: EMITTER
*Pb-free plating product number: 2SB688L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-120
V
Emitter Base Voltage
VEBO
-5
V
Collector Current
IC
-10
A
Base Current
IB
-1
A
Collector Power Dissipation (TC=25℃)
PC
80
W
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-40 ~ +150
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-off Current
ICBO
VCB = -120V, IE = 0
-10
A
Emitter Cut-off Current
IEBO
VEB = -5V, IC = 0
-10
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = -50mA, IB= 0
-120
V
DC Current Gain
hFE
VCE = -5V, IC = -1A
55
160
Collector-Emitter Saturation Voltage
VCE(sat)
IC = -5A, IB = -0.5A
-2.5
V
Base-Emitter Voltage
VBE
VCE = -5A, IC= -5A
-1.5
V
Transition Frequency
fT
VCE = -5A, IC= -1A
10
MHz
Collector Output Capacitance
Cob
VCB = -10V, IE = 0, f=1MHz
280
pF
CLASSIFICATION OF hFE
RANK
R
O
RANGE
55 ~ 110
80 ~ 160
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB688R | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 8A I(C) | TO-247VAR |
| 2SB689 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:LOW FREQUENCY POWER AMPLIFIER TV VERTICAL DEFLECTION OUTPUT |
| 2SB690 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD726 |
| 2SB691 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistor |
| 2SB694 | 制造商:n/a 功能描述:2SB694 TO3 S3B2F |
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