參數(shù)資料
型號: 2SB726
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type
中文描述: 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: SC-43A, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 35K
代理商: 2SB726
1
Transistor
2SB726
Silicon PNP epitaxial planer type
For general amplification
I
Features
G
High foward current transfer ratio h
FE
.
G
High collector to emitter voltage V
CEO
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
–80
–80
–5
–100
250
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CB
= –5V, I
E
= –2mA
I
C
= –20mA, I
B
= –2mA
V
CE
= –1V, I
C
= –100mA
V
CB
= –5V, I
E
= 2mA, f = 200MHz
min
–80
–80
–5
180
typ
–1
150
max
–100
–1
700
– 0.6
–1.2
Unit
nA
μ
A
V
V
V
V
V
MHz
*
h
FE
Rank classification
Rank
R
S
T
h
FE
180 ~ 360
260 ~ 520
360 ~ 700
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