參數(shù)資料
型號: 2SB727(K)
元件分類: 功率晶體管
英文描述: POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 32K
代理商: 2SB727(K)
2SB727(K)
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
V
I
C = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
V
I
E = –50 mA, IC = 0
Collector cutoff current
I
CBO
–100
AV
CB = –120 V, IE = 0
I
CEO
–10
AV
CE = –100 V, RBE = ∞
DC current transfer ratio
h
FE
1000
20000
V
CE = –3 V, IC = –3 A*
1
Collector to emitter saturation
V
CE(sat)1
–1.5
V
I
C = –3 A, IB = –6 mA*
1
voltage
V
CE(sat)2
–3.0
V
I
C = –6 A, IB = –60 mA*
1
Base to emitter saturation
V
BE(sat)1
–2.0
V
I
C = –3 A, IB = –6 mA*
1
voltage
V
BE(sat)2
–3.5
V
I
C = –6 A, IB = –60 mA*
1
Turn on time
t
on
1.0
sI
C = –3 A, IB1 = –IB2 = –6 mA
Turn off time
t
off
3.0
s
Note:
1. Pulse test
0
50
100
150
Case Temperature TC (°C)
Collector
power
dissipation
Pc
(W)
20
60
40
Maximum Collector Dissipation Curve
–0.03
–0.1
–0.3
–1.0
–3
–30
–10
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–1
–3
–10
–30
–100 –300 –1,000
Area of Safe Operation
IC (max) (Continuous)
iC (peak)
Ta = 25
°C
1 Shot pulse
DC
Operation
(T
C
=
25
°C)
PW
=
10
ms
1
ms
100
s
1
s
相關(guān)PDF資料
PDF描述
2SB727(K) 6 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB734-U4-AZ 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB734-U4 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB734-AZ 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB736-T1BBW3 300 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB731 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Audio Frequency Power Amplifier,Low Speed Switching
2SB733 制造商:N/A 功能描述:2SB733
2SB733-AZ-K3 制造商:Renesas Electronics Corporation 功能描述:
2SB733-AZ-K4 制造商:Renesas Electronics Corporation 功能描述:
2SB733-AZ-L2 制造商:Renesas Electronics Corporation 功能描述: