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參數(shù)資料
| 型號(hào)： | 2SB736A-B53 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 306K |
| 代理商： | 2SB736A-B53 |
Data Sheet D18429EJ2V0DS
5
2SK3325B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
R
DS
(on)
-
Drain
to
S
ource
O
n-state
Re
si
stanc
e-
Ω
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
0
50
100
150
ID = 10 A
5.0 A
VGS = 10 V
Pulsed
Tch - Channel Temperature -
°C
IF
–
Diode
Fo
rw
a
rd
Cur
rent
-
A
0.01
0.1
1
10
100
00.5
11.5
Pulsed
0 V
VGS = 10 V
VF(S-D) – Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
is
s,
C
os
s,
C
rs
s
-Cap
acitance
-
pF
0.1
1
10
100
1000
10000
0.1
1
10
100
1000
VGS = 0 V
f = 1 MHz
Crss
Ciss
Coss
VDS - Drain to Source Voltage – V
t
d(o
n)
,t
r,
t
d(of
f),
t
f-
Switching
Time
-
ns
1
10
100
1000
0.1
1
10
100
VDD = 150 V
VGS = 10 V
RG = 10
Ω
td(off)
tf
tr
td(on)
ID - Drain Current - A
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
trr
–
R
eve
rs
eR
ecovery
Time
-ns
10
100
1000
0.1
1
10
100
di/dt = 50 A/
μs
VGS = 0 V
ID - Drain Current - A
V
DS
–
Drain
to
S
o
urce
Voltage
-
V
0
100
200
300
400
500
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
9
10
VDS
VGS
250 V
VDD = 400 V
100 V
ID = 10 A
QG – Gate Chage - nC
V
GS
–
Gate
to
Source
Voltage
-
V
<R>
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB736AB54 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| 2SB736AB55 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| 2SB736ABW1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD) |
| 2SB736ABW1-T1B | 制造商:NEC 制造商全稱:NEC 功能描述:AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD) |
| 2SB736ABW2 | 制造商:NEC 制造商全稱:NEC 功能描述:AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD) |
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