參數(shù)資料
型號： 2SB744-BP
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 功率晶體管
英文描述： 3 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大?。?/td> 338K
代理商： 2SB744-BP
2SB744
PNP Silicon
Power Transistor
Features
Capable of 10Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 70V
Operating and storage junction temperature range: -55
OC to
+150
OC
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
70
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
3.0
A
PC
Collector power dissipation
10
W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
(IC=1.0mAdc, IB=0)
45
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=1.0mAdc, IE=0)
70
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=1.0mAdc, IC=0)
5.0
---
Vdc
ON CHARACTERISTICS
hFE(1)
Forward Current Transfer ratio
(IC=20mAdc, VCE=5.0Vdc)
30
---
hFE(2)
Forward Current Transfer ratio
(IC=0.5Adc, VCE=5.0Vdc)
60
320
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=1.5Adc, IB=0.15Adc)
---
2.0
Vdc