- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33330 > 2SB774S (PANASONIC CORP) 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB774S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 233K |
| 代理商： | 2SB774S |
Transistors
1
Publication date: March 2003
SJC00053BED
2SB0774 (2SB774)
Silicon PNP epitaxial planar type
For low-frequency amplification
■ Features
High emitter-base voltage (Collector open) V
EBO
Protective diodes and resistances between emitter and base can be
omitted.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
25
V
Emitter-base voltage (Collector open)
VEBO
15
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 0
30
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
25
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
15
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 0
1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 20 V, IB = 0
100
A
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 2 mA
210
460
hFE2
VCE
= 2 V, I
C
= 100 mA
90
Collector-emitter saturation voltage
VCE(sat)
IC = 100 mA, IB = 10 mA
0.5
V
Transition frequency
fT
VCB = 10 V, IE = 2 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4
pF
(Common-emitter reverse transfer)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Rank
R
S
hFE1
210 to 340
290 to 460
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0779R | 500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SB0788S | 20 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB0788T | 20 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB0792T | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SB0792S | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB775 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistor |
| 2SB775D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 85V V(BR)CEO | 6A I(C) | TO-218VAR |
| 2SB775E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 85V V(BR)CEO | 6A I(C) | TO-218VAR |
| 2SB776 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:100V/7A, AF 40W Output Applications |
| 2SB776_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。