- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄31653 > 2SB791(K) POWER TRANSISTOR, TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB791(K) |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR, TO-220AB |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | 2SB791(K) |
2SB791(K)
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
V
I
C = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
V
I
E = –50 mA, IC = 0
Collector cutoff current
I
CBO
—
–100
AV
CB = –120 V, IE = 0
I
CEO
—
–10
AV
CE = –100 V, RBE = ∞
DC current transfer ratio
h
1000
—
20000
V
CE = –3 V, IC = –4 A*
1
Collector to emitter saturation
V
CE(sat)(1)
—
–1.5
V
I
C = –4 A, IB = –8 mA*
1
voltage
V
CE(sat)(2)
—
–3.0
V
I
C = –8 A, IB = –80 mA*
1
Base to emitter saturation
V
BE(sat)(1)
—
–2.0
V
I
C = –4 A, IB = –8 mA*
1
voltage
V
BE(sat)(2)
—
–3.5
V
I
C = –8 A, IB = –80 mA*
1
Turn on time
t
on
—
0.5
—
sI
C = –4 A, IB1 = IB2 = –8 mA
Storage time
t
stg
—
1.6
—
s
Fall time
t
f
—
1.5
—
s
Note:
1. Pulse test
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
Area of Safe Operation
–30
–10
–3
–1.0
–0.3
Collector
current
I
C
(A)
–0.1
–0.03
–1
–10
–100
–1,000
–3
–30
–300
Collector to emitter voltage VCE (V)
Ta = 25
°C
1 Shot Pulse
iC(peak)
1
s
ICmax
(Continuous)
DC
Operation
(T
C =
25
°
C)
PW
=
10
ms
1
ms
10
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB792AT | 50 mA, 185 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SB800FL-AZ | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB800 | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB800-AZ | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB800FL-T1 | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB791K(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB792 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB792A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
| 2SB792AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
| 2SB792AS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。