- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄155755 > 2SB792 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires PDF資料下載
參數(shù)資料
| 型號： | 2SB792 |
| 英文描述： | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 中文描述： | 小信號裝置-小信號晶體管-一般使用低頻Amplifires |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | 2SB792 |
1
Transistor
2SB0709A (2SB709A)
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD0601A (2SD601A)
I Features
G High foward current transfer ratio hFE.
G Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO–236
2:Emitter
EIAJ:SC–59
3:Collector
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±0.15
0.65
±0.15
3
1
2
0.95
1.9
±
0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4
±0.2
0
to
0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–45
–7
–200
–100
200
150
–55 ~ +150
Unit
V
mA
mW
C
I Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –10V, IB = 0
IC = –10
A, I
E = 0
IC = –2mA, IB = 0
IE = –10A, IC = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–45
–7
160
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
A
V
MHz
pF
*1h
FE Rank classification
Rank
Q
R
S
hFE
160 ~ 260
210 ~ 340
290 ~ 460
Marking Symbol
BQ
BR
BS
Note.) The Part number in the Parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0792A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB792A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB709A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0745 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB745 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB792A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
| 2SB792AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
| 2SB792AS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
| 2SB792AT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
| 2SB792R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-236AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。