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參數(shù)資料
| 型號： | 2SB808 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 700 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SPA, 3 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 103K |
| 代理商： | 2SB808 |
2SB808/2SD1012
No.676—4/5
Main Specifications
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Note : for above-mentioned hFE rank.
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PO -- VIN
ITR08391
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THD -- PO
ITR08392
VCC=3V
RL=8
f=1kHz
VCC=3V
RL=8
f=1kHz
Output
Po
wer
,P
O
—
mW
Input Voltage, VIN — mV
T
otal
Harmonic
Distortion,
THD
—
%
Output Power, PO — mW
Sample Application Circuit : Low-voltage 3V (PO 120mW) ITL-OTL power amplifier.
Circuit configuration
For obtaining an output of more than 100mW, the middle-point voltage at the output stage and the collector voltage
of the driver transistor must be VCC/2. Therefore, the output stage is of quasi complementary configuration com-
posed of npn/npn transistors. The phase is reversed by the 2SA608 and the middle-point voltage are the output
stage and the collector voltage of the driver transistor are more to be VCC/2 so that the output can be maximized.
ITR09909
3.9k
100
DS442×2
100
150
1k
270k
22
27k
15k
D1
D2
R1
100F
6.3V
10
6.3V
10F
6.3V
220F
6.3V
TR5
TR2
TR3
INPUT
R1 : Used control idele current
For R1=820. use rank F for [TR4, 5(2SD1012)]
For R1=680. use rank G for [TR4, 5(2SD1012)]
+
330p
TR4
VCC=3V
SP
8
TR1
*
2SC536E, F
2SC536E
2SA608E, F
2SD1012F, G×2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1018M | 4 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 2SD1018 | 4 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 2SD1020F | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1024 | 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1026 | 15 A, 100 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB808F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 700MA I(C) | SPAK |
| 2SB808G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 700MA I(C) | SPAK |
| 2SB810 | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON TRANSISTOR |
| 2SB810-A-J | 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB810-A-M | 制造商:Renesas Electronics 功能描述:Bulk |
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