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參數(shù)資料
| 型號(hào)： | 2SB819Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 212K |
| 代理商： | 2SB819Q |
2SB0819
2
SJC00059BED
VBE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
VCE(sat) IC
Cob VCB
VCER RBE
ICEO Ta
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
0
10
8
2
6
4
0
4.0
3.0
1.0
2.5
3.5
2.0
0.5
1.5
Ta
= 25°C
IB
= 40 mA
30 mA
25 mA
20 mA
15 mA
10 mA
35 mA
5 mA
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
0.01
0.1
1
10
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 25°C
75
°C
25
°C
Base-emitter
saturation
voltage
V
BE(sat)
(V
)
Collector current I
C (A)
0.01
0.1
1
10
0
600
500
400
300
200
100
VCE
= 5 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
0.01
0.1
1
10
0
240
200
160
120
80
40
VCB
= 5 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (A)
1
10
100
0
150
120
60
90
30
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
0.001
0.01
0.1
1
10
0
60
50
40
30
20
10
Ta
= 25°C
Base-emitter resistance R
BE (k)
Collector-emitter
voltage
(Resistor
between
B
and
E)
V
CER
(V)
0120
100
80
20
60
40
1
1 000
100
10
VCE
= 12 V
Ambient temperature T
a (°C)
I CEO
(T
a
)
I CEO
(T
a
=
25
°C
)
0.01
0.1
1
10
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25°C
25
°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
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