參數(shù)資料
型號： 2SB852KA
英文描述： TRANSISTOR | BJT | DARLINGTON | PNP | 32V V(BR)CEO | 300MA I(C) | SOT-23VAR
中文描述： 晶體管|晶體管|達林頓|進步黨| 32V的五（巴西）總裁| 300mA的一（c）|的SOT - 23VAR
文件頁數(shù)： 3/5頁
文件大?。?/td> 29K
代理商： 2SB852KA
2SB857, 2SB858
3
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–2
–4
–6
–8
–10
Typical Output Characteristics
0
–1
–2
–3
–4
–5
TC = 25°C
P
c
= 40
W
IB = 0
–10 mA
–20
–30
–40
–50
–60
–70
–0.01
–0.02
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
Base to emitter voltage VBE (V)
Collector
current
I
C
(A)
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Typical Transfer Characteristics
VCE = –4 V
T
C
=
75
°C
25
–25
5
10
20
50
100
200
500
1,000
Collector current IC (A)
DC
current
transfer
ratio
h
FE
–0.01–0.02 –0.05–0.1 –0.2
–0.5 –1.0 –2
–4
DC Current Transfer Ratio vs.
Collector Current
VCE = –4 V
TC = 75°C
25
–25
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
Collector current IC (A)
Collector
to
emitter
saturation
voltage
V
CE
(sat)
(V)
–0.01–0.02 –0.05 –0.1 –0.2
–0.5 –1.0 –2
–5
Collector to Emitter Saturation
Voltage vs. Collector Current
TC = 75°C
25
–25
IC = 10 IB
相關PDF資料
PDF描述
2SB852KB TRANSISTOR | BJT | DARLINGTON | PNP | 32V V(BR)CEO | 300MA I(C) | SC-59
2SB856A Dual/Triple-Voltage µP Supervisory Circuits
2SB857C TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB
2SB858C Dual/Triple-Voltage µP Supervisory Circuits
2SB858D TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB
相關代理商/技術參數(shù)
參數(shù)描述
2SB852KB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 32V V(BR)CEO | 300MA I(C) | SC-59
2SB852KT146 制造商:ROHM Semiconductor 功能描述:
2SB852KT146B 功能描述:達林頓晶體管 DARL PNP 32V 0.3A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2SB855 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -50V -2A 20W BCE
2SB856 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTOR TO -50V -3A 25W BCE
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