參數(shù)資料
型號: 2SB857-D-T6C-K
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 功率晶體管
英文描述: 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝: TO-126C, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 169K
代理商: 2SB857-D-T6C-K
2SB857
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R217-006.E
ABSOLUTE MAXIMUM RATING (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltages
VCBO
-130
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-4
A
Collector Current (IC Peak)
IC(PEAK)
-8
A
TO-126C
10
W
TO-220
40
W
Total Power Dissipation (TC=25°C)
TO-252
PD
20
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-50~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO IC=-10μA, IE=0
-130
V
Collector-Emitter Breakdown Voltage
BVCEO IC=-50mA, IB=0
-100
V
Emitter-Base Breakdown Voltage
BVEBO IE=-10μA, IC=0
-5
V
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-2A, IB=-0.2A (Note)
-1
V
Base-Emitter Saturation Voltage
VBE(ON) VCE=-4V, IC=-1A (Note)
-1
V
Collector Cut-off Current
ICBO
VCB=-130V, IC=0
-1
μA
hFE1
VCE=-4V, IC=-0.1A (Note)
35
DC Current Gain
hFE2
VCE=-4V, IC=-1A (Note)
60
320
Transition Frequency
fT
VCE=-4V, IC=-500mA, f=100MHz
15
MHz
Note: Pulse Test: Pulse Width≤380μS, Duty Cycle≤2%.
CLASSIFICATION OF hFE2
CLASSIFICATION
B
C
D
RANGE
60 ~ 120
100 ~ 200
160 ~ 320
相關(guān)PDF資料
PDF描述
2SB857G-D-T6C-K 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
2SB857-C-T6C-K 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
2SB857G-D-TN3-R 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252
2SB857L-C-TA3-T 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB857G-D-TA3-T 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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