參數(shù)資料
型號: 2SB861
元件分類: 功率晶體管
英文描述: 2 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 28K
代理商: 2SB861
2SB861
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CBO
–150
V
I
C = –50 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
V
I
E = –5 mA, IC = 0
Collector cutoff current
I
CBO
——
–1
AV
CB = –120 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
200
V
CE = –4 V, IC = –50 mA
h
FE2
60
V
CE = –10 V, IC = –500 mA*
2
Collector to emitter saturation
voltage
V
CE(sat)
——
–3
V
I
C = –500 mA, IB = –50 mA
Base to emitter voltage
V
BE
——
–1
V
CE = –4 V, IC = –50 mA
Collector output capacitance
Cob
30
pF
V
CB = –100 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SB861 is grouped by h
FE1 as follows.
2. Pulse test
BC
60 to 120
100 to 200
0
50
100
150
200
Ambient temperature Ta (
°C)
Case temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
10
20
30
40
TC
1.8 W
Ta
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
–10
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–2
–5
–10 –20
–50 –100 –200
Area of Safe Operation
IC (max) (Continuous)
DC
Operation
(T
C =
25
°C)
(–60 V, –0.4 A)
(–15 V, –2 A)
(–150 V, –65 mA)
相關(guān)PDF資料
PDF描述
2SB885 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB904Q 20 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-218
2SB904 20 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-218
2SB904R 20 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-218
2SD1213 20 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-218
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB861B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB
2SB861C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB
2SB861C-E 制造商:Renesas Electronics 功能描述:Bulk
2SB862 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB
2SB863 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors