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參數(shù)資料
| 型號： | 2SB861B |
| 英文描述： | TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|進步黨| 150伏五（巴西）總裁|甲一（c）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SB861B |
2SB861
3
Collector to emitter Voltage V
CE
(V)
C
C
0
–4
–8
–12
–16
–20
–0.2
–0.4
–0.6
–0.8
–1.0
Typical Output Characteristics
–8
T
C
= 25
°
C
I
B
= 0
–1 mA
–2
–3
–4
–5
–6
–7
–5
–10
–20
–50
–100
–200
–500
–1,000
Base to emitter voltage V
BE
(V)
C
C
(
–0.4
–0.5
–0.6
–0.7
–0.8
–0.9
–1.0
Typical Transfer Characteristics
V
CE
= –4 V
T
C
= 75
°
C
25
–25
5
–10
10
20
50
100
500
200
Collector current I
C
(mA)
D
F
–20
–50 –100 –200
–500–1,000
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –4 V
T
C
= 75
°
C
25
–25
–0.1
–0.2
–0.5
–1.0
–2
–5
–10
Collector current I
C
(mA)
C
V
C
–10
–20
–50 –100 –200
–500–1,000
Collector to Emitter Saturation
Voltage vs. Collector Current
I
C
= 10 I
B
T
C
= 75
°
C
25
–25
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB861C | TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB862 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SB863 | TRANSISTOR | BJT | PNP | 140V V(BR)CEO | 10A I(C) | TO-126VAR |
| 2SB873 | Silicon PNP epitaxial planer type(For low-frequency power amplification) |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB861C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C-E | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB862 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SB863 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB863-O | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
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