參數(shù)資料
型號: 2SB863
英文描述: TRANSISTOR | BJT | PNP | 140V V(BR)CEO | 10A I(C) | TO-126VAR
中文描述: 晶體管|晶體管|進步黨| 140伏特五(巴西)總裁| 10A條一(c)|至126VAR
文件頁數(shù): 2/5頁
文件大?。?/td> 29K
代理商: 2SB863
2SB861
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CBO
–150
V
I
C
= –50 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–6
V
I
E
= –5 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
1
h
FE2
V
CE(sat)
–1
μ
A
V
CB
= –120 V, I
E
= 0
V
CE
= –4 V, I
C
= –50 mA
V
CE
= –10 V, I
C
= –500 mA*
2
I
C
= –500 mA, I
B
= –50 mA
DC current transfer ratio
60
200
60
Collector to emitter saturation
voltage
–3
V
Base to emitter voltage
V
BE
Cob
–1
V
V
CE
= –4 V, I
C
= –50 mA
V
= –100 V, I
E
= 0,
f = 1 MHz
Collector output capacitance
30
pF
Notes: 1. The 2SB861 is grouped by h
FE1
as follows.
2. Pulse test
B
C
60 to 120
100 to 200
0
50
100
150
200
Ambient temperature Ta (
°
C)
Case temperature T
C
(
°
C)
C
Maximum Collector Dissipation Curve
10
20
30
40
T
C
1.8 W
Ta
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
–10
Collector to emitter Voltage V
CE
(V)
C
C
–2
–5
–10 –20
–50 –100–200
Area of Safe Operation
I
C
(max)
(Continuous)
DCOeain(T
C
=2
°
C
(–60 V, –0.4 A)
(–15 V, –2 A)
(–150 V, –65 mA)
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