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參數(shù)資料
| 型號： | 2SB874B |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁|甲一（c）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 28K |
| 代理商： | 2SB874B |
2SB874
2
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–100
—
—
V
I
C
= –1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–60
—
—
V
I
C
= –10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
V
I
E
= –1 mA, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
—
—
–1.0
μ
A
μ
A
V
CB
= –80 V, I
E
= 0
V
EB
= –5 V, I
C
= 0
V
CE
= –5 V, I
C
= –0.5 A*
V
CE
= –5 V, I
C
= –2 A*
V
CE
= –5 V, I
C
= –2 A*
I
C
= –1.5 A I
B
= –0.15 A*
Emitter cutoff current
—
—
–1.0
DC current transfer ratio
1
60
—
200
2
40
—
—
2
Base to emitter voltage
—
—
–1.4
V
2
Collector to emitter saturation
voltage
—
–0.6
–1.0
V
2
Gain bandwidth product
f
T
Cob
—
250
—
MHz
V
CE
= –5 V, I
C
= –0.5 A*
V
CB
= –10 V, I
E
= 0, f = 1 MHz
2
Collector output capacitance
Notes: 1. The 2SB874 is grouped by h
FE
as follows.
2. Pulse test
—
50
—
pF
B
C
60 to 120
100 to 200
0
50
100
150
Case Temperature T
C
(
°
C)
C
Maximum Collector Dissipation Curve
10
20
30
–0.01
–0.03
–0.1
–0.3
–1.0
–10
–3
Collector to emitter Voltage V
CE
(V)
C
C
–2
–5
–10
–20
–50 –100 –200
Area of Safe Operation
i
C
(peak)
(–10 V, –3 A)
(–20 V, –1 A)
(–13.3 V, –3 A)
(–30 V, –1.33 A)
PW=
DCOeao
(–60 V, –0.25 A)
(–60 V, –0.15 A)
(–60 V, –0.1 A)
I
C
(max)
(–10 V, –2 A)
1m
(
C
=2
°
Ta = 25
°
C
1 Shot pulse
1 m
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB874C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-220AB |
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| 2SB881 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Driver Applications |
| 2SB882 | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 60V 10A TO-220AA |
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