參數(shù)資料
型號: 2SB903R
元件分類: 功率晶體管
英文描述: 12 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 37K
代理商: 2SB903R
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
30V/12A High-Speed Switching Applications
Ordering number:ENN990C
2SB903/2SD1212
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/D251MH/4067KI/3075KI No.990–1/4
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( ) : 2SB903
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2010C
[2SB903/2SD1212]
Applications
Suitable for relay drivers, high-speed inverters,
converters, and other general large-current switching
applications.
Features
Low collector-to-emitter saturation voltage :
VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max.
Large current capacity.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
Tc=25C
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* : The 2SB903/2SD1212 are graded as follows by hFE at 1A :
Continued on next page.
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