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參數(shù)資料
| 型號： | 2SB928PQ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | N-TYPE PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SB928PQ |
1
Power Transistors
2SB928, 2SB928A
Silicon PNP epitaxial planar type
For power amplification
For TV vartical deflection output
Complementary to 2SD1250 and 2SD1250A
s Features
q
High collector to emitter VCEO
q
High collector power dissipation PC
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–200
–150
–180
–6
–3
–2
30
1.3
150
–55 to +150
Unit
V
A
C
2SB928
2SB928A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCBO
VCEO
VEBO
hFE1
*
hFE2
VBE
VCE(sat)
fT
Conditions
VCB = –200V, IE = 0
VEB = –4V, IC = 0
IC = –500A, IE = 0
IC = –5mA, IB = 0
IE = –500A, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –400mA
IC = –500mA, IB = –50mA
VCE = –10V, IC = – 0.5A, f = 10MHz
min
–200
–150
–180
–6
60
50
typ
30
max
–50
240
–1
Unit
A
V
MHz
2SB928
2SB928A
*h
FE1 Rank classification
Rank
Q
P
hFE1
60 to 140
100 to 240
Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification.
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±0.2
6.0
±0.5
10.0
±0.3
10.5min.
2.0
1.5
±0.1
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Unit: mm
8.5
±0.2
4.4
±0.5
2.0
10.0
±0.3
14.7
±0.5
4.4
±0.5
6.0
±0.3
3.4
±0.3
2.54
±0.3
5.08
±0.5
1.0
±0.1
0.8
±0.1
1.5
+0
–0.4
3.0
+0.4
–0.2
0 to 0.4
1.1 max.
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
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| 2SB930Q | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB928Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-262VAR |
| 2SB929 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUB: 2SB929-Q |
| 2SB929A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type(For power amplification) |
| 2SB929AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-262VAR |
| 2SB929APQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-262VAR |
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