- 您現在的位置：買賣IC網 > PDF目錄155752 > 2SB929A Power Device - Power Transistors - General-Purpose power amplification PDF資料下載
參數資料
| 型號： | 2SB929A |
| 英文描述： | Power Device - Power Transistors - General-Purpose power amplification |
| 中文描述： | 功率器件-功率晶體管-通用功率放大 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 84K |
| 代理商： | 2SB929A |
2SB0928, 2SB0928A
2
SJD00010BED
VCE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
IC VBE
Safe operation area
Rth t
0
160
40
120
80
10
30
20
40
(1)TC
= T
a
(2)With a 50 mm
× 50 mm × 2 mm
Al heat sink
(3)Without heat sink
(PC
= 1.3 W)
(1)
(2)
(3)
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
0
12
2
10
4
8
6
600
500
400
300
200
100
TC
= 25°C
4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
IB
= 4.5 mA
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
0
1.0
0.8
0.6
0.4
– 0.2
0
– 0.4
– 0.8
–1.2
–2.0
–1.6
VCE
= 10 V
25
°C
25°C
TC
= 100°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A)
0.01
0.1
1
10
0.1
1
IC / IB
= 10
TC
= 100°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
0.01
0.1
1
10
1
10
VCE
= 10 V
TC
= 100°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
102
104
103
0.01
0.1
1
10
1
10
VCE
= 10 V
f
= 10 MHz
TC
= 25°C
Transition
frequency
f
T
(MHz)
Collector current I
C (A)
102
104
103
–1
–10
–100
–1 000
– 0.01
–10
–1
– 0.1
Non repetitive pulse
TC
= 25°C
t
= 1 ms
t
= 5 ms
2SB0928A
2SB0928
ICP
IC
t
= 0.5 ms
t
= 300 ms
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
102
101
1
10
103
102
104
103
102
10
1
101
102
103
(1)
(2)
(1)Without heat sink
(2)With a 50 mm
× 50 mm × 2 mm Al heat sink
Time t (s)
Thermal
resistance
R
th
(°
C/W)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB0930 | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB930 | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB0930A | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB930A | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB0931 | Power Device - Power Transistors - General-Purpose power amplification |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB929AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-262VAR |
| 2SB929APQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-262VAR |
| 2SB929AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-262VAR |
| 2SB929AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SB929P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-262VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復。