參數(shù)資料
型號: 2SB931
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type(For power switching)
中文描述: 3 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, N-G1, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 57K
代理商: 2SB931
2
Power Transistors
2SB931
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1) T
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C
=25C
–80mA
–60mA
–40mA
–30mA
–16mA
–12mA
–8mA
–4mA
–20mA
I
B
=–100mA
Collector to emitter voltage V
CE
(V)
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=20
25C
T
C
=100C
–25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=20
T
C
=–100C
25C
–25C
B
B
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
CE
=–2V
T
C
=100C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
=–10V
f=10MHz
T
C
=25C
T
T
1
Collector to base voltage V
CB
(V)
–1
–10
–100
– 0.3
–3
–30
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
0
–3.2
– 0.8
–2.4
–1.6
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
)
V
=–50V
Ta=25C
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
Non repetitive pulse
T
C
=25C
10ms
t=0.5ms
1ms
I
CP
I
C
300ms
Collector to emitter voltage V
CE
(V)
C
C
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