參數(shù)資料
型號: 2SB932
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type(For power switching)
中文描述: 4 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: N-G1, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 58K
代理商: 2SB932
2
Power Transistors
2SB932
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
40
30
10
25
35
20
5
15
(1) T
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C
=25C
––70mA
–90mA
–60mA
–40mA
–50mA
–30mA
–20mA
–8mA
–5mA
I
B
=–100mA
Collector to emitter voltage V
CE
(V)
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=20
25C
T
C
=100C
–25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=20
T
C
=–25C
25C
100C
B
B
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
CE
=–2V
T
C
=100C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
=–10V
f=10MHz
T
C
=25C
T
T
1
Collector to base voltage V
CB
(V)
–1
–10
–100
– 0.3
–3
–30
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
0
–3.2
– 0.8
–2.4
–1.6
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=30
(–I
B1
=I
)
V
CC
=–50V
T
C
=25C
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
Non repetitive pulse
T
C
=25C
10ms
t=0.5ms
1ms
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
C
C
相關PDF資料
PDF描述
2SD1255 Silicon PNP epitaxial planar type(For power switching)
2SB933 Silicon PNP epitaxial planar type(For power switching)
2SB934 Silicon PNP epitaxial planar type
2SB935 Silicon PNP epitaxial planar type(For low-voltage switching)
2SB935A Silicon PNP epitaxial planar type(For low-voltage switching)
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