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參數(shù)資料
| 型號(hào)： | 2SB949 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type Darlington |
| 中文描述： | 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F-A1, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 63K |
| 代理商： | 2SB949 |
1
Power Transistors
2SB949, 2SB949A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1275 and 2SD1275A
I
Features
G
High foward current transfer ratio h
FE
G
High-speed switching
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–80
–60
–80
–5
–4
–2
35
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB949
2SB949A
2SB949
2SB949A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
2000 to 5000
4000 to 10000
Unit: mm
4.2
±
0.2
Internal Connection
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4
±
0
φ
3.1
±
0.1
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –60V, I
E
= 0
V
CB
= –80V, I
E
= 0
V
CB
= –30V, I
B
= 0
V
CB
= –40V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –2A
V
CE
= –4V, I
C
= –2A
I
C
= –2A, I
B
= –8mA
V
CE
= –10V, I
C
= – 0.5A, f = 1MHz
I
C
= –2A, I
B1
= –8mA, I
B2
= 8mA,
V
CC
= –50V
min
–60
–80
1000
2000
typ
20
0.4
1.5
0.5
max
–1
–1
–2
–2
–2
10000
–2.8
–2.5
Unit
mA
mA
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SB949
2SB949A
2SB949
2SB949A
2SB949
2SB949A
B
C
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB949A | For Power Amplification And Switching |
| 2SB950 | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) |
| 2SB950A | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) |
| 2SB951 | Silicon PNP epitaxial planar type Darlington(For midium-speed switching) |
| 2SB951A | Silicon PNP epitaxial planar type Darlington(For midium-speed switching) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB949/2SB949A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SB949. 2SB949A - PNP Transistor Darlington |
| 2SB949A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FA -80V -2A 35W BCE |
| 2SB949AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | SOT-186 |
| 2SB949AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | SOT-186 |
| 2SB949AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | SOT-186 |
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