參數(shù)資料
型號: 2SB951A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type Darlington(For midium-speed switching)
中文描述: 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
文件頁數(shù): 2/3頁
文件大?。?/td> 71K
代理商: 2SB951A
2
Power Transistors
2SB951, 2SB951A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
CE(sat)
— I
C
V
BE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
–5
–4
–1
–3
–2
0
–8
–6
–2
–5
–7
–4
–1
–3
I
B
=–2–1.8mA
–1.6mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
T
C
=25C
Collector to emitter voltage V
CE
(V)
C
C
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C
/I
B
=500
T
C
=100C
–25C
25C
C
C
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
– 0.1
–100
–10
–1
– 0.3
–3
–30
(1) I
C
/I
B
=250
(2) I
C
/I
B
=500
(3) I
/I
B
=1000
T
C
=25C
(1)
(2)
(3)
C
C
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C
/I
B
=500
T
C
=–25C
25C
100C
B
B
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
– 0.1
–100
–10
–1
– 0.3
–3
–30
(1)
(2)
(3)
(1) I
C
/I
B
=250
(2) I
C
/I
B
=500
(3) I
/I
B
=1000
T
C
=25C
B
B
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
10
2
10
5
10
4
10
3
V
CE
=–3V
T
C
=100C
25C
–25C
F
F
1
Collector to base voltage V
CB
(V)
–1
–10
–100
– 0.3
–3
–30
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
t=1ms
10ms
I
CP
I
C
2
2
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
C
C
相關PDF資料
PDF描述
2SB952 Silicon PNP epitaxial planar type(For low-voltage switching)
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