參數(shù)資料
型號: 2SB976
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type(For low-frequency output amplification)
中文描述: 5000 mA, 18 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, TO-92-B1, 3 PIN
文件頁數(shù): 1/2頁
文件大小: 35K
代理商: 2SB976
1
Transistor
2SB976
Silicon PNP epitaxial planer type
For low-frequency output amplification
For DC-DC converter
For stroboscope
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Large collector current I
C
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–27
–18
–7
–8
–5
0.75
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –2V, I
C
= –2A
*2
I
C
= –3A, I
B
= –0.1A
*2
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
min
–18
–7
125
typ
– 0.4
120
60
max
–100
–1
625
–1
Unit
nA
μ
A
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank
Q
R
h
FE
125 ~ 205
180 ~ 625
*2
Pulse measurement
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