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參數(shù)資料
| 型號： | 2SC1162D |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2500 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-126MOD, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 26K |
| 代理商： | 2SC1162D |
2SC1162
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
35
—
V
I
C = 1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
35
—
V
I
C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 1 mA, IC = 0
Collector cutoff current
I
CBO
——
20
AV
CB = 35 V, IE = 0
DC current transfer ratio
h
FE*
1
60
—
320
V
CE = 2 V, IC = 0.5 A
h
FE
20
—
V
CE = 2 V, IC = 1.5 A
(pulse test)
Base to emitter voltage
V
BE
—
0.93
1.5
V
CE = 2 V, IC = 1.5 A
(pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
—
0.5
1.0
V
I
C = 2 A, IB = 0.2 A (pulse test)
Gain bandwidth product
f
T
—
180
—
MHz
V
CE = 2 V, IC = 0.2 A
Note:
1. The 2SC1162 is grouped by h
FE as follows.
BC
D
60 to 120
100 to 200
160 to 320
0.8
0.6
0.4
0.2
0
50
100
150
200
Ambient temperature Ta (
°C)
Collector
power
dissipation
P
C
(W)
Maximum Collector Dissipation Curve
0.75
2
0.5
0.1
520
50
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
Area of Safe Operation
5
1.0
0.2
12
10
IC(max)(DC Operation)
TC = 25°C
P
C =
10
W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1163 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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| 2SC1165 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR40V .5A .7W |
| 2SC1166 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON NPN EPITAXIAL TRANSISTOR |
| 2SC1169 | 制造商:Toshiba America Electronic Components 功能描述:Bipolar Junction Transistor, NPN Type, TO-37VAR |
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