參數(shù)資料
型號: 2SC1251
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 小信號晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/2頁
文件大?。?/td> 40K
代理商: 2SC1251
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/2
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 10 mA
BV
CBO
I
C
= 10 mA
BV
EBO
I
E
= 1.0 mA
h
FE
V
CE
= 5.0 V I
C
= 100 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
25
UNITS
V
45
V
3.0
V
20
200
---
C
OB
V
CB
= 15 V
f = 1.0 MHz
3.0
pF
P
G
P
1dB
V
CE
= 15 V I
C
= 100 mA P
OUT
= 0.5 W
f = 1000 MHz
13
+27
+29
dB
dBm
NPN SILICON RF POWER TRANSISTOR
2SC1251
DESCRIPTION:
The
2SC1251
is a Common Emitter
Device Designed for High Linearity
Class A Amplifiers up to 2.0 GHz.
FEATURES INCLUDE:
Direct Replacement for
NE74020
High Gain - 10 dB min. @ 1.0 GHz
Gold Metalization
MAXIMUM RATINGS
I
C
300 mA
V
CB
45 V
P
DISS
5.3W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
33
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE .204 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
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