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| 型號： | 2SC1815(L) |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 577K |
| 代理商： | 2SC1815(L) |
2SC1815(L)
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815(L)
Audio Frequency Voltage Amplifier Applications
Low Noise Amplifier Applications
High breakdown voltage, high current capability
: VCEO = 50 V (min), IC = 150 mA (max)
Excellent linearity of hFE
: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 0.2dB (typ.) (f = 1 kHz).
Complementary to 2SA1015 (L). (O, Y, GR class).
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC
0.1
μA
hFE (1)
(Note)
VCE = 6 V, IC = 2 mA
70
700
DC current gain
hFE (2)
VCE = 6 V, IC = 150 mA
25
100
Collector-emitter
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
Saturation voltage
Base-emitter
VBE (sat)
IC = 100 mA, IB = 10 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.5
pF
Base intrinsic resistance
rbb’
VCE = 10 V, IE = 1 mA, f = 30 MHz
50
Ω
NF (1)
VCE = 6 V, IC = 0.1 mA
RG = 10 kΩ, f = 100 Hz
0.5
6
Noise figure
NF (2)
VCE = 6 V, IC = 0.1 mA
RG = 10 kΩ, f = 1 kHz
0.2
3
dB
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC1815(L)-Y | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1815-Y | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1815GR-BP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1815O | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1815Y | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1815LBL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SC1815L-BL-T92-B-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
| 2SC1815L-BL-T92-B-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
| 2SC1815L-BL-T92-C-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
| 2SC1815L-BL-T92-C-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
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