參數(shù)資料
型號(hào): 2SC1847
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN epitaxial planar type
中文描述: 1.5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝: ROHS COMPLIANT, TO-126B-A1, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 94K
代理商: 2SC1847
Power Transistors
2SC1847
Silicon NPN epitaxial planar type
1
Publication date: February 2003
SJD00095BED
For medium output power amplification
Complementary to 2SA0886
Features
Output of 4 W can be obtained by a complementary pair with
2SA0886
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings
T
a
=
25
°
C
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
3.2
±
0.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
1 mA, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
I
C
=
2 A, I
B
=
0.2 A
I
C
=
2 A, I
B
=
0.2 A
V
CB
=
5 V, I
E
=
0.5 A, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
50
V
Collector-emitter voltage (Base open)
V
CEO
40
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
1
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
100
Emitter-base cutoff current (Collector open)
I
EBO
10
Forward current transfer ratio
*
h
FE
80
220
Collector-emitter saturation voltage
V
CE(sat)
1
V
Base-emitter saturation voltage
V
BE(sat)
1.5
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
35
pF
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
Rank
Q
R
h
FE
80 to 160
120 to 220
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
40
V
Emitter-base voltage (Collector open)
V
EBO
I
C
5
V
Collector current
1.5
A
Peak collector current
I
CP
3
A
Collector power dissipation
P
C
T
j
T
stg
1.2
W
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
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