參數(shù)資料
型號(hào): 2SC2377
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon NPN epitaxial planer type(For high-frequency amplification)
中文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 58K
代理商: 2SC2377
1
Transistor
2SC2377
Silicon NPN epitaxial planer type
For high-frequency amplification
I
Features
G
Optimum for RF amplification of FM/AM radios.
G
High transition frequency f
T
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
15
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Noise figure
Power gain
Common emitter reverse transfer capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
V
BE
f
T
NF
PG
C
re
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 20V, I
B
= 0
V
EB
= 3V, I
C
= 0
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA, f = 100MHz
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CE
= 6V, I
C
= 1mA
min
65
450
20
typ
720
650
3.3
24
0.8
max
100
10
1
260
5
1
*
h
FE
Rank classification
Rank
C
D
h
FE
65 ~ 160
100 ~ 260
Unit
nA
μ
A
μ
A
mV
MHz
dB
dB
pF
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